Sputtered then evaporated back metal process for increased throughput

ABSTRACT

A method is described that includes sputtering multiple layers on a back surface of the photovoltaic structure, the photovoltaic structure being made of at least one group III-V semiconductor material, and evaporating, over the multiple layers, one or more additional layers including a metal layer, the back metal structure being formed by the multiple layers and the additional layers. A photovoltaic device is also described that includes a back metal structure disposed over a back surface of a photovoltaic structure made of a group III-V semiconductor material, the back metal structure including one or more evaporated layers disposed over multiple sputtered layers, the one or more evaporated layers including a metal layer. By allowing evaporation along with sputtering, tool size and costs can be reduced, including minimizing a number of vacuum breaks. Moreover, good yield and reliability, such as reducing dark line defects (DLDs), can also be achieved.

CROSS REFERENCE TO RELATED APPLICATIONS

The current application is a divisional application of U.S. patentapplication Ser. No. 16/399,012, the entire contents of which are herebyincorporated by reference.

BACKGROUND

The present disclosure relates generally to metal contacts inoptoelectronic devices, and more specifically, to a process that usesboth sputtering and evaporation for increased throughput when producinga back metal structure in an optoelectronic device such as aphotovoltaic device.

Metal structures used in back metal contacts for optoelectronic devicessuch as, but not limited to, photovoltaic devices (e.g., solar cells),include multiple sputtered layers. The back metal contacts can bedeposited using a large number of sputtering targets, with each targetrunning at a moderate power. By spacing the targets out and spreadingthe deposition in time it is possible to reduce the temperature load ofthe wafers used to build the photovoltaic devices. Such spacing of thetargets, however, tends to increase capital costs as the tools may needto be longer and include more targets.

Developing processes that can reduce tool size and costs, and/or thatrequire a minimum number of vacuum breaks is generally desirable.Moreover, it is also desirable that these processes can provide goodyield and reliability, such as reducing or limiting dark line defects(DLDs).

SUMMARY OF THE DISCLOSURE

In an aspect of this disclosure, a method of forming a back metalstructure on a photovoltaic structure is described that includessputtering multiple layers on a back surface of the photovoltaicstructure, the photovoltaic structure being made of at least one groupIII-V semiconductor material, and evaporating, over the multiple layers,one or more additional layers, where the back metal structure is formedby the multiple sputtered layers and the one or more additionalevaporated layers. In some examples, a deposition rate from theevaporating of the one or more additional layers is greater than adeposition rate from the sputtering of the multiple layers. In someexamples, a duration of the evaporating of the one or more additionallayers is shorter than a duration of the sputtering of the multiplelayers. The sputtering of the multiple layers may include sputtering alayer closest to the back surface of the photovoltaic structure, thelayer being configured to adhere remaining layers of the multiple layersto the back surface of the photovoltaic structure. The sputtering of themultiple layers may include sputtering a layer made of a reflectingmaterial. The sputtering of the multiple layers may include sputtering alayer that is closest to the one or more additional layers, the layerbeing configured to provide a migration barrier from the metal layer tothe photovoltaic structure.

In another aspect of this disclosure, a photovoltaic device is describedthat includes a photovoltaic structure made of a group III-Vsemiconductor material, and a back metal structure disposed over a backsurface of the photovoltaic structure, the back metal structureincluding multiple sputtered layers and one or more evaporated layersdisposed over the multiple sputtered layers, the one or more evaporatedlayers including a metal layer. The multiple sputtered layers mayinclude a layer closest to the back surface of the photovoltaicstructure, the layer being configured to adhere remaining layers of themultiple sputtered layers to the back surface of the photovoltaicstructure. The multiple sputtered layers may include a layer made of areflecting material. The multiple sputtered layers may include a layerthat is closest to the one or more evaporated layers, the layer beingconfigured to provide a migration barrier from the metal layer to thephotovoltaic structure.

By allowing evaporation along with sputtering in connection with themethod and/or the photovoltaic device described herein, tool size andcosts can be reduced, and/or a number of vacuum breaks can be minimized.Moreover, it is also possible to achieve good yield and reliability by,for example, reducing dark line defects (DLDs).

BRIEF DESCRIPTION OF THE DRAWINGS

The appended drawings describe only some implementations forillustrative purposes and are therefore not to be considered limiting ofscope.

FIGS. 1A and 1B illustrate an implementation of a back metal structureon a back surface of a photovoltaic structure.

FIG. 2 illustrates a process and system for forming a back metalstructure that includes both sputtering and evaporation.

FIG. 3 illustrates a flow chart of a method of forming a back metalstructure on a photovoltaic structure.

FIG. 4 illustrates a first implementation of a photovoltaic device witha reflector layer and having back metal contacts based on the back metalstructure described herein.

FIG. 5 illustrates a second implementation of a photovoltaic device witha reflector layer and having back metal contacts based on the back metalstructure described herein.

FIG. 6 illustrates a third implementation of a photovoltaic device witha reflector layer and having back metal contacts based on the back metalstructure described herein.

FIG. 7 illustrates a fourth implementation of a photovoltaic device witha reflector layer and having back metal contacts based on the back metalstructure described herein.

FIG. 8 illustrates a first implementation of a photovoltaic device withmultiple pn junctions and having back metal contacts based on the backmetal structure described herein.

FIG. 9 illustrates a second implementation of a photovoltaic device withmultiple pn junctions and having back metal contacts based on the backmetal structure described herein.

DETAILED DESCRIPTION

The present disclosure relates generally to metal contacts inoptoelectronic devices, and more specifically, to a process that usesboth sputtering and evaporation for increased throughput when producinga back metal structure in an optoelectronic device such as aphotovoltaic device.

The following description is presented to enable one of ordinary skillin the art to make and use aspects of this disclosure and is provided inthe context of a patent application and its requirements. Variousmodifications to implementations and the generic principles and featuresdescribed herein will be readily apparent to those skilled in the art.Thus, the present disclosure is not intended to be limited to theimplementations shown, but is to be accorded the widest scope consistentwith the principles and features described herein.

A back metal structure is an arrangement of different layers that areused to form a back contact layer or back contacts in a photovoltaicdevice or solar cell. In a non-limiting example, the back metalstructure is a stack of layers that includes a first layer that is athin layer next or adjacent to a back surface of a photovoltaicstructure (e.g., a light-capturing semiconductor structure of thephotovoltaic device) that provides adhesive functionality for theremaining layers of the back metal structure (sometimes referred to as aglue or adhesive layer). The stack of layers can optionally include asecond layer made of a reflective material (sometimes referred to as areflective layer). The stack of layers can also include a third layerthat provides a migration barrier to prevent material migration to thephotovoltaic structure (sometimes referred to as a barrier layer). Thestack of layers can also include a fourth layer that is a thick layer ofa highly conductive material such as a metal (sometimes referred to as ametal layer). The fourth layer can be made of, for example, copper, andthe third layer can be used to prevent migration or diffusion of copperinto the photovoltaic structure.

The process of forming this type of back metal structure is fullysputtered. That is, each of the layers included in the back metalstructure are formed by sputtering. Sputtering typically refers to aprocess whereby particles are ejected from a solid target material dueto bombardment of the target by energetic particles and the ejectedparticles are then deposited on an intended surface.

In order to keep the sputtering process temperature below a desiredtemperature limit (e.g., about 250° C.), the various layers of the backmetal structure are deposited using a large number of sputteringtargets, with each target running at a moderate power level. By spacingthe sputtering targets and spreading the deposition in time it ispossible to control the temperature to reduce the temperature load onthe wafers or substrates on which the photovoltaic devices are beingmade. This approach, however, tends to significantly increase capitalcosts by having to use a much longer tool and a large number ofsputtering targets. This approach also increases processing time, whichreduces the overall throughput.

Rather than using a process that involves only sputtering, having aprocess or method that can evaporate at least one layer (e.g., the thickmetal layer) instead could result in reduced tool size and operatingcost because the evaporated layer can be deposited at much higherdeposition rates than those used for sputtering without exceeding thedesired temperature limit. Some of the layers in the back metalstructure (e.g., the first layer and the third layer) may be made ofmaterials or alloys that cannot be evaporated and because evaporationrequires a different chamber pressure, such a process would require avacuum break any time it needs to change from sputtering to evaporationor from evaporation to sputtering.

A challenge is to implement a process and a corresponding back metalstructure that when implemented would reduce the overall capital costsby having a simpler sputtering operation with fewer targets and therebysmaller equipment. Such a process is also to require a minimum number ofvacuum breaks (e.g., one vacuum break if possible), while also providingfor good yield and reliability. One approach is to change the stack oflayers in the back metal structure to a structure or arrangement thatallows for a process or method in which at least one of the layers,preferably a thick layer, may be deposited by evaporation in order toreduce the size and cost of the sputtering tool and to increasemanufacturing throughput by using the higher evaporation depositionrates. Such a stack of layers may therefore include just the first layer(e.g., the glue or adhesive layer), optionally the second layer (e.g.the reflective layer), the third layer (e.g., the barrier layer), andthe fourth layer (e.g., the metal layer) described above, with thefirst, second, and/or third layers being deposited by sputtering and thefourth layer being deposited by evaporation and potentially at a muchhigher deposition rate. This approach, however, can have somereliability issues, in particular with defects called dark line defectsor DLDs. Eliminating this reliability issue in connection with theprocess of sputtering multiple layers (e.g., the first, second, and/orthird layers) of the back metal structure and also evaporating at leastone additional layer (e.g., the fourth layer—thick metal layer) of theback metal structure is therefore needed to make such a process a viablesolution.

In this disclosure, a back metal structure process and a correspondingback metal structure are proposed that reduce capital costs and/orequipment size, and increases overall throughput. Such as process mayalso provide appropriate reliability and reasonable yields by involvingthe following aspects or features that are different from previousprocesses or methods. Moreover, the back metal structure formed usingthe proposed processes or methods may be used in connection with theback metal contacts for a wide range of photovoltaic devices,non-limiting examples of such devices are also described below.

First, a base stack (e.g., a base stack of layers) is sputtered at lowpressure. The base stack may include the multiple sputtered layers ofthe back metal structure (with one or more additional layers evaporatedover the base stack to form the complete back metal structure). The basestack, which may be also be referred to as a first portion of the backmetal structure, may include the first layer, the second layer, and/orthe third layer described above. The low pressure can be a pressure thatis less than some baseline process level such as, for example, 9millitorr (mTorr) pressure. The low pressure can help prevent theformation of DLDs.

Second, in addition to the low pressure sputtering of the base stack,the third layer (e.g., the barrier layer) can be sputtered at a highpower. Using low power deposition may increase the formation of DLDs.Moreover, using low power deposition may make the third layer moresusceptible to etching by hydrofluoric acid (HF), which may be used in,for example, an epitaxial liftoff (ELO) operation as part of the overallfabrication of the photovoltaic device (e.g., the solar cell). Sinceboth of these issues can have a negative impact, sputtering of the thirdlayer at a high power can provide improved results. In a non-limitingexample, the third layer may be deposited at a baseline normalized powerof 1 Watt/cm² or greater.

Third, increasing a thickness of the third layer can also prevent theformation of DLDs. In one example, the thickness of the third layer canbe set to be greater than 100 nanometers (nm).

Fourth, evaporating the fourth layer (e.g., the thick metal layer) notonly reduces the time it takes to deposit the layer because of thehigher deposition rates that can be achieved using evaporation, but suchan approach may also reduce the tendency to form DLDs when compared tosputtering.

A proposed back metal stack or back metal structure is made up ofmultiple sputtered layers combined with one or more evaporated layerswhich are deposited subsequent to and over the sputtered layers. Thesputtered layers are also referred to as a base stack, a sputteredsegment, or a first portion of the back metal structure. The evaporatedlayers are also referred to as additional layers, an evaporated segment,or a second portion of the back metal structure.

In one example, by evaporating the fourth layer (e.g., thick metallayer) of the back metal structure on top of the multiple sputteredlayers instead of sputtering the fourth layer, the overall or totalprocess of forming the back metal structure can be reduced byapproximately 66% (e.g., from 1.5 hours to 30 minutes), where a majorityof that time is used for sputtering the multiple sputtered layers (e.g.,the first layer, the second layer, and/or the third layer). This is asignificant improvement in manufacturing efficiency, particularly forhigh-volume manufacturing operations. The use of a brief air breakbetween the sputtering and the evaporation processes does not have asignificant impact on the overall throughput gain achieved, and does notappear to compromise performance, yield, or reliability.

FIG. 1A illustrates an implementation of a back metal structure 10 thatincludes multiple sputtered layers 20 over a back surface of aphotovoltaic structure 40 (or a back surface of a semiconductorstructure that is part of the photovoltaic structure 40). As mentionedabove, the multiple sputtered layers 20 may also be referred to as abase stack, a sputtered segment, or a first portion of the back metalstructure 10. The back metal structure 10 also includes one or moreevaporated layers 30, which may be referred to as additional layers tothe base stack, an evaporated segment, or a second portion of the backmetal structure 10. The multiple sputtered layers 20 may be disposeddirectly over the photovoltaic structure 40, and the evaporated layer(s)30 may be disposed directly over the multiple sputtered layers 20. Whilethe multiple sputtered layers 20 may be placed directly over thephotovoltaic structure 40, there may be instances in which at least onethin layer may exist between the multiple sputtered layers 20 and thephotovoltaic structure 40.

FIG. 1B illustrates implementation more detailed view of the back metalstructure 10 where the multiple sputtered layers 20 disposed over theback surface of the photovoltaic structure 10 may include a first layer22 (e.g., a glue or adhesive layer as described in connection with thefirst layer above), a second layer 24 (e.g., a reflective layer asdescribed in connection with the second layer above), and/or a thirdlayer 26 (e.g., a barrier layer as described in connection with thethird layer above). The one or more evaporated layers 30 disposed overthe multiple sputtered layers 20 may include at least a fourth layer 32(e.g., a thick metal layer as described in connection with the fourthlayer above). In some implementations, the first layer 22 may be thinnerthan the second layer 24, which in turn may be thinner than the thirdlayer 26, which in turn may be thinner than the fourth layer 32. In someinstances, the order of some of the sputtered layers 20 may be changed.

A photovoltaic device (e.g., a solar cell) can be implemented using theback metal structure 10 described in the implementations in FIGS. 1A and1B. For example, a photovoltaic device or solar cell can include aphotovoltaic structure (e.g., a semiconductor structure configured tocapture light for electrical conversion) and a back metal structure(e.g., the back metal structure 10) disposed over a back surface of thephotovoltaic structure, the back metal structure including a firstportion having multiple sputtered layers and a second portion having atleast one evaporated layer.

FIG. 2 illustrates an example of a process and a system for forming aback metal structure that includes both sputtering and evaporation. Asystem 50 is described in which a platen 55 with multiple wafers 57 onwhich a back metal structure (e.g., the back metal structure 10) is tobe deposited is provided to a sputtering component 60. The sputteringcomponent 60 is configured to perform sputtering of the multiplesputtering layers (e.g., the multiple sputtering layers 20) on backsurfaces of photovoltaic structures in the wafers 57. The sputteringcomponent 60 may include multiple targets 61 a, 61 n that are used tosputter the appropriate materials and/or alloys as part of forming themultiple sputtered layers. Once the operation by the sputteringcomponent 60 is completed, the platen 55 with the multiple wafers 57goes through one air or vacuum break 63 and is provided to anevaporation component 65 configured to perform the evaporation of one ormore layers (e.g., one or more evaporated layers 30) over the multiplesputtered layers.

The sputtering component 60 may be a single processing tool or equipment(e.g., a sputtering chamber) that is separate from the evaporationcomponent 65 (e.g., an evaporation chamber), which may also be a singleprocessing tool or equipment. In another implementation, the sputteringcomponent 60 and the evaporation component 65 may both be part of a sameprocessing tool or equipment 67 and may be integrated or connected insuch a way to form part of the same processing tool or equipment. Thenumber of targets needed in the sputtering component 60 may be reducedbecause one or more thick layers are deposited using the evaporationcomponent 65, which may reduce the overall cost of the system 50. Also,as discussed above, the process or operation may be faster because ofthe higher deposition rates that can be achieved with the evaporationcomponent 65.

FIG. 3 illustrates a flow chart of a method 70 of forming a back metalstructure (e.g., the back metal structure 10) on a photovoltaicstructure or device (see examples in FIGS. 4-9). The method or process70 may be used as part of forming or manufacturing a photovoltaic devicethat uses the back metal structure. In an aspect, the method or process70 may be performed using, for example, the sputtering component 60 andthe evaporation component 65 shown in FIG. 2.

The method 70 includes, at 80, sputtering multiple layers (e.g., themultiple sputtered layers 20) on a back surface of the photovoltaicstructure (e.g., the photovoltaic structure 40), the photovoltaicstructure being made of at least one group III-V semiconductor material(e.g., one or more of InGaP, AlInGaP, GaAs, AlGaAs, InGaAs, AlinGaAs,InGaAsP, AlInP, or AlGaAs). The photovoltaic structure need not be solimited and can be made at least partially from materials other thangroup III-V semiconductor materials.

At 81, as part of 80, the method 70 may include sputtering of themultiple layers includes sputtering a layer closest to the back surfaceof the photovoltaic structure (e.g., the first layer 22—a glue oradhesive layer), the layer being configured to adhere remaining layersof the multiple layers to the back surface of the photovoltaicstructure.

At 83, as part of 80, the method 70 may include sputtering a layer madeof a reflecting material (e.g., the second layer 24—a reflective layer).

The method includes, at 90, evaporating, over the multiple layers, oneor more additional layers (e.g., the one or more evaporated layers 30)including a metal layer (e.g., the fourth layer 32—a thick metal layersuch as a copper layer), wherein the back metal structure is formed bythe multiple layers and the one or more additional layers.

At 85, as part of 80, the method 70 may include sputtering a layer thatis closest to the one or more additional layers (e.g., the third layer26—a barrier layer), the layer being configured to provide a migrationbarrier from the metal layer to the photovoltaic structure. The layerfrom the multiple layers that is closest to the one or more additionallayers has a thickness greater than 100 nanometers.

In an aspect of the method 70, a deposition rate from the evaporating ofthe one or more additional layers is greater than a deposition rate fromthe sputtering of the multiple layers.

In another aspect of the method 70, a duration of the evaporating of theone or more additional layers is shorter than a duration of thesputtering of the multiple layers.

In another aspect of the method 70, the sputtering of the multiplelayers is a low-pressure sputtering process.

In yet another aspect of the method 70, the sputtering of the multiplelayers includes sputtering one or more of the multiple layers at atarget power of 1 Watt/cm² or higher.

In another aspect of the method 70, the method may further includeperforming an air break between the sputtering and the evaporating (seee.g., FIG. 2—air or vacuum break 63 between the sputtering component 60and the evaporation component 65).

In another aspect of the method 70, the sputtering and the evaporatingare both performed within a single manufacturing tool in consecutiveprocess operations (see e.g., processing tool or equipment 67 in FIG.2). The sputtering of the multiple layers may include applying multiplesputtering targets (e.g., the targets 61 a, . . . , 61 n) within asingle manufacturing tool (e.g., within the sputtering component 60).

In yet another aspect of the method 70, the sputtering of the multiplelayers is concurrently performed on a plurality of photovoltaicstructures that include the photovoltaic structure, and the evaporatingof the one or more additional layers over the multiple layers isconcurrently performed on the plurality of photovoltaic structures (seee.g., the platen 55 with multiple wafers 57 onto which multiple layersare sputtered and at least one layer is evaporated).

The process or method described above allows for the fabrication of aback metal structure using a lower capital cost approach and with higherthroughput (e.g., reduced fabrication time because of high growth rateof evaporating thick metal layer). This process or method also enablesappropriate reliability and reasonable yield (e.g., reduced instances ofDLDs).

Below are described various implementations of optoelectronic devices,such as photovoltaic devices, for example, in which contacts are usedthat can be based on the same or similar stack or structure of the backmetal structure 10 described above. FIGS. 4-9 describe examples ofphotovoltaic devices with non-continuous contacts on both the front andthe back side. Although the examples in FIGS. 4-9 are based onnon-continuous contacts, is to be understood that the back metalstructure and/or the method described above in connection with FIGS. 1A,1B, 2, and 3 can be used with both non-continuous contacts and withcontinuous contacts. Moreover, the same or similar structures and/ormethods may also be applied to front metal structures used in frontcontacts.

A plurality of non-continuous back contacts on an optoelectronic device(e.g., photovoltaic device or solar cell) can improve the reflectivityand reduce the power losses associated with the configuration of theback surface of the device. In an implementation, an optoelectronicdevice can be provided that has non-continuous back contacts. Thecompleted device can be left with both sides able to accept incidentlight or can be backed by a dielectric and metal reflector to bettertrap light within the device. By reducing the amount of metal in directcontact with the semiconductor, plasmonic losses at the back contact arereduced, improving the angle-averaged reflectivity of the back contact,which in turn increases the minority carrier density in the device underillumination, improving the external fluorescence of the device andincreasing the open-circuit and operating voltages of the device. Thesefeatures are of particular importance in a photovoltaic cell and forlight emitting diode (LED) applications. Accordingly, described below inconjunction with the accompanying figures are multiple implementationsof an optoelectronic device which utilizes such contacts, which in turncan be made based on the method (see e.g., FIG. 3) and/or structure (seee.g., FIGS. 1A and 1B) described above.

By “non-continuous” it is not necessarily implied that the metalcontacts are disconnected. The back metal contacts could be allconnected together, or they could be disconnected. It is importantmerely that they do not cover the entire surface. In the same way, thefront metal contacts are non-continuous yet connected, in that they donot cover the entire front surface of the device (which would block theincident sunlight in the case of a solar cell, or the exiting light inthe case of an LED), and yet are connected such that power can be inputor extracted by making contact to a single point on the top metal of thedevice (as well as making connection to the back of the device).

FIG. 4 depicts a first implementation of a photovoltaic device with areflector layer (a photovoltaic device 400). The photovoltaic device 400includes a semiconductor structure of which all of it or portions of itcan be referred to as a photovoltaic structure (e.g., photovoltaicstructure 40) or a solar cell structure. In an implementation, thesemiconductor structure comprises an n-layer 712 and p-layer 714 coupledtogether. For example, the n-layer is an n-emitter GaAs layer 712 andthe p-layer is a P-B SF (Back Surface Field) AlGaAs layer 714. Howeverone of ordinary skill in the art readily recognizes a variety ofmaterials including but not limited to group III-V compoundsemiconductors such as GaAs, AlGaAs, InGaP, InGaAs, and alloys thereof,etc., may be utilized for either of these layers and that would bewithin the scope of the present disclosure. Furthermore, the junctionformed between the two layers does not have to be a heterojunction, thatis, both the n-layer 712 and p-layer 714 may be the same material (bothlayers being GaAs or both layers AlGaAs, for example) and that would bewithin the scope of the present disclosure. Also the doping could beinverted, with p-type material at the top or front of the device, facingthe sun, and n-type material at the bottom or back of the device.Furthermore, the photovoltaic structure or solar cell structure could becomprised of multiple p-n layers grown in series, for example to form amulti junction solar cell.

In this implementation, on a top or front side of the semiconductorstructure are a plurality of contact members 703 a-703 n. Each of thetop-side contact members 703 a-703 n comprises an optionalantireflective coating (ARC) 702, a n-metal contact 704 underneath theoptional ARC 702, and a gallium arsenide (GaAs) contact 706 underneaththe n-metal contact 704. A window layer 710 is preferably on top of thesemiconductor structure. The optional ARC layer 702 is also in contactwith the window layer 710, and possibly the p-type material 714 (asillustrated to the left of the figure). On a back side of thesemiconductor structure is a plurality of non-continuous contacts 715a-715 n. Each of the non-continuous contacts 715 includes an optionalcontact layer 716 coupled to the back side of the semiconductorstructure and a p-metal contact 718 underneath contact layer 716. Anoptional ARC layer 720 may also be present on the back side of thephotovoltaic device 400.

The photovoltaic device 400 also includes a reflector layer 502 which isin contact with a dielectric 302 that encapsulates the bottom sidecontacts 715 a-715 n. Typically the reflector layer 502 will be a highlyreflective metal such as silver, gold, copper, or aluminum, or an alloyof one or more of these with either other metals in the list, or withother materials not on the list. The reflector layer 502 is to be a goodconductor of electricity.

In an example, at least a portion of the non-continuous contacts 715a-715 n in FIG. 4 can include a stack or structure such as the backmetal structure 10 in FIGS. 1A and 1B, which can be made using themethod or process 70 described in connection with FIG. 3 and/or usingthe system 50 described in FIG. 2.

FIG. 5 depicts a second implementation of a photovoltaic device with areflector layer (a photovoltaic device 500). The photovoltaic device 500is substantially similar to the photovoltaic device 400, except that itincludes a top side layer 201. The top side layer 201 comprises anoptional second ARC 202, a transparent member 204, such as glass orplastic, underneath the second ARC 202 and an encapsulant 206 which isunderneath the transparent member 204. The encapsulant 206 surrounds topside contacts 703 a′-703 n′. In an example, at least a portion ofnon-continuous contacts 715 a′-715 n′ in FIG. 5 can include a stack orstructure such as the back metal structure 10 in FIGS. 1A and 1B, whichcan be made using the method or process 70 described in connection withFIG. 3 and/or using the system 50 described in FIG. 2.

In FIGS. 4-9, similar elements or components may use the same or similarreference numbers. For example, non-continuous contacts 715 a-715 n inFIG. 4 may correspond to non-continuous contacts 715 a′-715 n′ in FIG.5, where all the digits of the reference numbers are the same and anapostrophe (or more) is used to indicate a different instance associatedwith a different photovoltaic device structure. In another example, theoptional ARC layer 702 in FIG. 4 may correspond to optional ARC layer1102′ in FIG. 8, where only the last two digits are the same and anapostrophe (or more) is used to indicate a different instance associatedwith a different photovoltaic device structure.

FIG. 6 depicts a third implementation of a photovoltaic device with areflector layer (a photovoltaic device 600). The photovoltaic device 600is substantially the same as the photovoltaic device 400, except that areflector layer 502″ is electrically coupled to back side contacts 715a″-715 n″. In an example, at least a portion of the non-continuouscontacts 715 a″-715 n″ in FIG. 6 can include a stack or structure suchas the back metal structure 10 in FIGS. 1A and 1B, which can be madeusing the method or process 70 described in connection with FIG. 3and/or using the system 50 described in FIG. 2.

FIG. 7 depicts a fourth implementation of a photovoltaic device with areflector layer (a photovoltaic device 700). The photovoltaic device 700is substantially similar to the photovoltaic device 500 (with optionalsecond ARC 202, transparent member 204, and encapsulant 206), exceptthat a reflector layer 502′ is electrically coupled to back sidecontacts 715 a″-715 n″. In an example, at least a portion of thenon-continuous contacts 715 a″-715 n″ in FIG. 7 can include a stack orstructure such as the back metal structure 10 in FIGS. 1A and 1B, whichcan be made using the method or process 70 described in connection withFIG. 3 and/or using the system 50 described in FIG. 2.

FIG. 8 depicts a first implementation of a photovoltaic device withmultiple pn junctions (a photovoltaic device 800). The photovoltaicdevice 800 is substantially similar to the photovoltaic device 600,except that an additional pn junction structure 601′ of higher bandgaphas been added above a structure 1101′ (e.g., with n-emitter GaAs layer1112′ and the p-layer is a P-B SF AlGaAs layer 1114′). The structure601′ is comprised of a window layer 602′ (for example AlInP, AlGaInP, orAlGaAs), an n-type material 604′ (for example InGaP or AlGaAs), a p-typematerial 606′ (for example InGaP or AlGaAs), and back-surface field orback side window layer 608′ (for example AlInP, AlGaInP, or AlGaAs).This structure is electrically and optically connected to structure1101′ through a tunnel junction structure 1131′. The structure 1131′ iscomprised of a highly p-type doped layer 1102′ (for example InGaP orAlGaAs), and a highly n-type doped layer 1104′ (for example InGaP orAlGaAs). In an example, at least a portion of the non-continuouscontacts 1115 a′-1115 n′ in FIG. 8 can include a stack or structure suchas the back metal structure 10 in FIGS. 1A and 1B, which can be madeusing the method or process 70 described in connection with FIG. 3and/or using the system 50 described in FIG. 2. The photovoltaic device800 (or similar devices having multiple pn junctions) may be referred toas a multi junction device or a multi junction structure and may includemultiple sub-cells (e.g., having one or more pn junction each).

One of ordinary skill in the art readily recognizes a variety ofmaterials listed could differ from the examples listed herein.Furthermore, the pn junction formed in structure 601′ could be ahomojunction or a heterojunction that is, both the n-type material 604′and p-type material 606′ could be the same material, or could bedifferent materials (e.g., materials of different molar compositionsand/or materials with different elements), and that would be within thescope of the present disclosure. Also the doping could be inverted, withp-type material at the top of the device, facing the sun, and n-typematerial at the bottom. One or more additional pn structures could beadded to structure 1101′ in a similar fashion, either above or belowstructure 1101′, and possibly coupled to the rest of the device througha tunnel junction layer or layers.

FIG. 9 depicts a second implementation of a photovoltaic device withmultiple pn junctions (a photovoltaic device 900). The photovoltaicdevice 900 is substantially similar to the photovoltaic device 800,except that it includes the optional second ARC 202, the transparentmember 204, and the encapsulant 206 that surrounds the top side contacts1103 a″-1103 n″. In an example, at least a portion of the non-continuouscontacts 1115 a″-1115 n″ in FIG. 9 can include a stack or structure suchas the back metal structure 10 in FIGS. 1A and 1B, which can be madeusing the method or process 70 described in connection with FIG. 3and/or using the system 50 described in FIG. 2.

In all of the above identified implementations a plurality ofnon-continuous back contacts on an optoelectronic device improve thereflectivity and reduce the losses associated with the back surface ofthe device, for example plasmonic losses at a metal-semiconductorinterface. By adding enhancements such as a dielectric material, backside reflector and the like, the reflectivity can also be improved insome applications. In addition, in an implementation the back sideand/or the front side of the semiconductor can be textured to improvelight scattering into and/or out of the device. Finally, it is wellunderstood by those of ordinary skill in the art that additional layerscould exist either on top of the structures shown, or underneath them.For example, underneath the reflector metal there could be other supportlayers such as metals, polymers, glasses, or any combination thereof.

The non-continuous metal contacts in any of the above mentionedimplementations can be arranged such that there is no alignment (in thesense of an imaginary perpendicular line drawn directly through thecell) between the contacts on the top of the device and the plurality ofnon-continuous metal contacts directly adjacent to the semiconductorstructure material on the back of the device. In some implementations,there may still be alignment between the front metal and the back mirrormetal, but there will be a dielectric between them. In otherimplementations there is no back mirror metal. In either case, this canprovide an additional advantage in that the chance of a metal-on-metalshort, either during device fabrication or after the device has aged,can be greatly reduced. This can improve manufacturing yield and productreliability.

Moreover, at least a portion of the structure of the metal contacts,such as the back metal contacts described in connection with FIG. 4-FIG.9, can be made or fabricated using the process or method described aboveto provide a more cost effective fabrication process and higherthroughput. This approach may also be used to achieve appropriatereliability and reasonable yield (e.g., reduced instances of DLDs).

Although the present disclosure has been described in accordance withthe implementations shown, one of ordinary skill in the art will readilyrecognize that there could be variations to the implementations andthose variations would be within the scope of the present disclosure.

What is claimed is:
 1. A method of forming a back metal structure on aphotovoltaic structure, the method comprising: sputtering multiplelayers on a back surface of the photovoltaic structure, the photovoltaicstructure being made of at least one group III-V semiconductor material;and evaporating, over the multiple layers, one or more additional layersincluding a metal layer, wherein the back metal structure is formed bythe multiple layers and the one or more additional layers.
 2. The methodof claim 1, wherein a deposition rate from the evaporating of the one ormore additional layers is greater than a deposition rate from thesputtering of the multiple layers.
 3. The method of claim 1, wherein aduration of the evaporating of the one or more additional layers isshorter than a duration of the sputtering of the multiple layers.
 4. Themethod of claim 1, wherein the sputtering of the multiple layersincludes sputtering a layer closest to the back surface of thephotovoltaic structure, the layer being configured to adhere remaininglayers of the multiple layers to the back surface of the photovoltaicstructure.
 5. The method of claim 1, wherein the sputtering of themultiple layers includes sputtering a layer made of a reflectingmaterial.
 6. The method of claim 1, wherein the sputtering of themultiple layers includes sputtering a layer that is closest to the oneor more additional layers, the layer being configured to provide amigration barrier from the metal layer to the photovoltaic structure. 7.The method of claim 6, wherein the layer from the multiple layers thatis closest to the one or more additional layers has a thickness greaterthan 100 nanometers.
 8. The method of claim 1, wherein the sputtering ofthe multiple layers is a low-pressure sputtering process.
 9. The methodof claim 1, wherein the sputtering of the multiple layers includessputtering one or more of the multiple layers at a target power of 1Watt/cm² or higher.
 10. The method of claim 1, further comprisingperforming an air break between the sputtering and the evaporating. 11.The method of claim 1, wherein the sputtering and the evaporating areboth performed within a single manufacturing tool in consecutive processoperations.
 12. The method of claim 1, wherein the sputtering of themultiple layers includes applying multiple sputtering targets within asingle manufacturing tool.
 13. The method of claim 1, wherein: thesputtering of the multiple layers is concurrently performed on aplurality of photovoltaic structures that include the photovoltaicstructure, and the evaporating of the one or more additional layers overthe multiple layers is concurrently performed on the plurality ofphotovoltaic structures.
 14. A method of forming a back metal structureon a photovoltaic structure, the method comprising: sputtering multiplelayers on a back surface of the photovoltaic structure that is made of agroup III-V semiconductor material; disposing one or more evaporatedlayers including a metal layer and over the multiple sputtered layers;forming a back metal structure from the multiple sputtered layers andthe one or more evaporated layers, wherein the multiple sputtered layersinclude a layer closest to the back surface of the photovoltaicstructure, the layer being configured to adhere remaining layers of themultiple sputtered layers to the back surface of the photovoltaicstructure.
 15. The method of claim 14, further comprising forming themultiple sputtered layers to include a layer made of a reflectingmaterial.
 16. The method of claim 14, further comprising forming themultiple sputtered layers to include a layer that is closest to the oneor more evaporated layers, the layer being configured to provide amigration barrier from the metal layer to the photovoltaic structure.17. The method of claim 14, wherein the layer from the multiplesputtered layers that is closest to the one or more evaporated layershas a thickness greater than 100 nanometers.
 18. The method of claim 14,further comprising forming a thickness of the one or more evaporatedlayers to be greater than a thickness of the multiple sputtered layers.19. The method of claim 14, further comprising providing one or more ofan encapsulant layer, a glass or plastic layer, or an anti-reflectivecoating (ARC) on a front side of the photovoltaic device and at leastpartially over a front surface of the photovoltaic structure.
 20. Themethod of claim 14, further comprising providing one or more of adielectric layer, a glass or plastic layer, or an ARC disposed on a backside of the photovoltaic device and at least partially over the backsurface of the photovoltaic structure.